Semiconductor & Solar >> ULTECH Co. Ltd, South Korea

Plasma Ion Immersion Implantation

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    ULTECH has developed plasma immersion ion implantation systems utilizing the inductively-coupled plasma (ICP) sources. These produce a high-density plasma filling the chamber, and when a high (negative) potential is applied to the sample, the plasma ions are driven into the surface of the material.

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      ULTECH’s Plasma Ion Immersion System is used for surface modification by extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. General Applications of Ultech’s Plasma Ion Immersion Implantation system:

      – Ultra-Shallow Junction Doping for sub-100 nm CMOS
      – Conformal doping of non-planar CMOS and other electronic devices
      – Poly-Si Gate & Trench Sidewall Doping
      – Gate Dielectric Modification
      – Layer transfer technology for “SOI”, “Si-on Anything” and other electron materials
      (SiC, GaAs, InP, GaN, etc)
      – SOI by SPIMOX (Separation by Plasma Ion Immersion Implantation of Oxygen)