Plasma Assisted Metal Organic Chemical Vapor Deposition (MOCVD)

Nano-Master, Inc. has developed the first Table Top Plasma Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) system for InGaN and AlGaN deposition processes. The MOCVD(Metal Organic Chemical Vapor Deposition) features include five bubblers with individual cooling baths, heated gas lines, 950 °C platen, three gas rings, RF plasma source with Shower Head Gas Distribution and N2 flush at the end of the process, 5 10-7 Torr base pressure, 250 l/sec turbo pump with oil-free scroll pump, PC controlled, fully automated and safety interlocked. Recently this technology has been extended to five 4” wafer stand alone batch system which can be integrated into a cluster configuration to meet high throughput production needs.