Semiconductor & Solar >> ULTECH Co. Ltd, South Korea

Chemical Vapor Deposition (CVD)

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    Ultech’s CVD are widely used to deposit materials which include: silicon (SiO2, germanium, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-k dielectrics.

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      Ultech’s Chemical Vapor Deposition System (CVD) are widely used to deposit materials in various forms, including: monocrystalline, polycrystalline, amorphous, and epitaxial. These materials include: silicon (SiO2, germanium, carbide, nitride, oxynitride), carbon (fiber, nanofibers, nanotubes, diamond and graphene), fluorocarbons, filaments, tungsten, titanium nitride and various high-k dielectrics. The system general features include;

      – Piece wafer, 1 wafer/batch

      – Lamp heater, max.1000℃

      – LM type loader (manual moving)

      – ICP source + RF power 600W

      – Rotary pump (fomblin oil type)

      – Manual angle valve

      – MFC: Ar(500sccm), CH4(500sccm), H2(500sccm)

      – Manual control (switch panel)

      *Type of CVD’s offered by ULTECH: Graphene CVD, Hot Wire CVD, CNT remote CVD and Si Nano Wire CVD.