Semiconductor & Solar >> NanoBeam, U.K

The Electron Beam lithography: nB5

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    The nB5 electron beam lithography is a generation ahead of the current competition and with its field-proven performance has gained acceptance in the market place. It has excellent stability and has demonstrated an average uptime of greater than 93%.

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      Detailed Specs

      Electron Beam Lithography (EBL) aims:
      – Electron Beam Lithography’s refine design and components reduce routine service requirements.
      – Achieve a machine-fault-downtime of less than 5% annually.
      – Enhance performance.
      – Facilitate volume production.

      Specification:
      – Maximum Substrate/ Wafer Size 200 mm Gaussain beam step and exposure writing statergy Beam Voltage range 20kV – 100kV Beam Currents from 0.1 nA up to 100nA
      – Feature size on resist <8nm Laser interferometer stage with 0.31 nm resolution
      – Stitching/overlay error <25nm for 500um field
      – Automatic loading 5 chuck airlock system
      – 20 bit DAC, 55 MHz pattern generator
      – Full automated alignment
      – 6 chuck substrate load lock
      – Minimum Sopt Size < 5nm

      The Electron Beam Lithogrpahy system will provide a platform for further development to high deflection speed and further integrated electronics.